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Analysis of laterally non-uniform layers and sub-micron devices by Rutherford backscattering spectrometry
A method for analyzing sub-micron devices by Rutherford backscattering spectrometry is presented. Using simplifying assumptions, we are able to simulate the backscattering spectrum of laterally non-uniform samples. The ...
In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400°C
The key feature of this paper is to highlight the use of an in situ XRD technique to the study of the initial reaction of Ni(Pt) on Si(100) isothermally. The concentration of Ni and Pt as a function of time in the low ...