Now showing items 1-4 of 4
On the morphological changes of Ni- and Ni(Pt)-silicides
The issue of agglomeration and layer inversion has remained critical because conductivity of thin silicide films is sensitive to the degradation of the film ...
Effect of Ti alloying in nickel silicide formation
In the presence of interfacial oxide, an addition of 20 at.% Ti to Ni film leads to the formation of a thick TiOx layer at the Ni(Ti)/Si interface upon annealing, preventing the inter-diffusion of Ni and Si hence hindering ...
Erbium silicidation on SiGe for advanced MOS application
Ti capping has been found to be beneficial on Er(Si1−yGey)2 formation in Ti/Er/Si1−xGex system. In the case of the system without Ti cap, the sample was oxidized at temperature as low as 300 °C and Er2SiO5 was found to be ...
Effects of Si(001) surface amorphization on ErSi2 thin film
In a materials study of ErSi2/Si(001) as a potential candidate for Schottky source/drain NMOS application, the properties of ErSi2 thin film were investigated with varying degrees of Si(001) surface amorphization. The ...