Now showing items 1-4 of 4
Selective modification of band gap in GaInNAs/GaAs structures by quantum well intermixing
We report an investigation of selective quantum-well intermixing (QWI) in 1.3-mum GaInNAs/GaAs multi quantum wells by silica-cap-induced disordering processes. After thermal annealing under specific conditions, controlled ...
Characterization of selective quantum well intermixing in 1.3 mu m GaInNAs/GaAs structures
Rapid thermal annealing combined with SiO2 caps deposited on the surface of samples by different techniques is used to selectively disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in situ to the ...
Quantum well intermixing in GaInNAs/GaAs structures
We report on the characteristics of quantum well intermixing in GaInNAs/GaAs structures of differing N content. Rapid thermal annealing combined with SiO2 caps deposited on the surface of the samples is used to disorder ...
Optical transitions in GaInNAs/GaAs multiquantum wells with varying N contents investigated by photoluminescence excitation spectroscopy
We report on the nitrogen-concentration dependence of optical transitions between quantized states of electrons and holes in GaInNAs/GaAs multi-quantum wells. Using low-temperature photoluminescence excitation spectroscopy, ...