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      Chi, Dong Zhi (2)
      Hoe, Keat Mun (2)
      Lee, Pooi See (2)
      Pey, Kin Leong (2)
      Tan, Eu Jin (2)
      Chin, Yoke King (1)Cui, Guangda (1)Lo, Guo-Qiang (1)Setiawan, Y. (1)Singh, Navab (1)Date2008 (1)2007 (1)SubjectEngineering (2)... View More

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      Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel 

      Tan, Eu Jin; Pey, Kin Leong; Singh, Navab; Lo, Guo-Qiang; Chi, Dong Zhi; Chin, Yoke King; Hoe, Keat Mun; Cui, Guangda; Lee, Pooi See (2008)
      We have fabricated silicon nanowire N-MOSFETs using erbium disilicide (ErSi2−x) in a Schottky source/drain back-gated architecture. Although the subthreshold swing (~180 mV/dec) and drain-induced barrier lowering ...
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      Materials and electrical characterization of Er(Si1-xGex)(2-y) films formed on Si1-xGex(001) (x=0-0.3) via rapid thermal annealing 

      Tan, Eu Jin; Pey, Kin Leong; Chi, Dong Zhi; Lee, Pooi See; Setiawan, Y.; Hoe, Keat Mun (2007)
      We studied erbium germanosilicide films formed on relaxed p-type Si1−xGex(100) (x = 0–0.3) virtual substrates by conventional rapid thermal annealing (RTA) at temperatures of 500–700°C. Two dimensional X-ray diffraction ...

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