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On the morphological changes of Ni- and Ni(Pt)-silicides
The issue of agglomeration and layer inversion has remained critical because conductivity of thin silicide films is sensitive to the degradation of the film ...
Effect of ion implantation on layer inversion of Ni silicided poly-Si
The effect of ion implantation on the behavior and extent of layer inversion in Ni-silicided poly-Si was investigated. Two different implantation species, namely, BF2 + ...
Comparative study of current-voltage characteristics of Ni and Ni(Pt)- alloy silicided p+/n diodes
A comparative study of the I –V characteristics of p+/n diodes silicided with a pure Ni and Ni(Pt) alloy has been performed. Higher saturation currents as well as abnormal reverse I –V characteristics were observed for ...
Effects of Si(001) surface amorphization on ErSi2 thin film
In a materials study of ErSi2/Si(001) as a potential candidate for Schottky source/drain NMOS application, the properties of ErSi2 thin film were investigated with varying degrees of Si(001) surface amorphization. The ...