Now showing items 1-5 of 5
Modification of Ta/polymeric low-k interface by electron beam treatment
Polymeric dielectric, porous polyarylene ether (PAE), was introduced in the Cu damascene structures because of its low dielectric constant to reduce resistance-capacitance (RC) delay. One of the requirements ...
Fracture toughness measurement of thin films on compliant substrate using controlled buckling test
Thin films and multilayered structures are increasingly used in the industry. One of the important mechanical properties of these thin layers is the fracture toughness, which may be quite different from the known value of ...
Analytical modeling of reservoir effect on electromigration in Cu interconnects
Electromigration (EM) in Cu dual-damascene interconnects with extensions (also described as overhangs or reservoirs) ranging from 0 to 120 nm in the upper metal (M2) was investigated by an analytical model considering the ...
Effect of electron beam treatment on adhesion of Ta/polymeric low-k interface
Reliability of the Cu/low-k structure is a serious concern since the metal/dielectric interface is generally weak. The adhesion of the Ta/polyarylene ether interfaces with and without electron beam ...
Study of interfacial adhesion energy of multilayered ULSI thin film structures using four-point bending test
Adhesion between barrier layers and interconnect metals or dielectrics continues to be a significant concern in the microelectronic industry, with delamination occurring in between the layers leading to device failure. As ...