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Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors
(2008)
Schottky source/drain (S/D) N-metal–oxide–semiconductor-field-effect transistor (MOSFET) have been fabricated using a simplified top down process with silicon nanowires (SiNW) as the channel body and ErSi2-x as the metal ...
