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Improved NiSi salicide process using presilicide N2+ implant for MOSFETs
An improved Ni salicide process has been developed by incorporating nitrogen (N+ 2 ) implant prior to Ni deposition to widen the salicide processing temperature window. Salicided poly-Si gate ...
Micro-Raman spectroscopy investigation of nickel silicides and nickel (platinum) silicides
The formation of Ni silicides has been successfully monitored by Raman spectroscopy. Ni silicides formed at different annealing temperatures using rapid thermal annealing were analyzed using Rutherford backscattering ...