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      Demir, Hilmi Volkan (4)
      Hasanov, Namig (4)Ji, Yun (4)
      Ju, Zhengang (4)
      Kyaw, Zabu (4)
      Liu, Wei (4)
      Tan, Swee Tiam (4)
      Zhang, Zi-Hui (4)Sun, Xiao Wei (3)Zhang, Xueliang (3)... View MoreDate2014 (3)2013 (1)Subject
      Engineering (4)
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      Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering 

      Zhang, Zi-Hui; Ju, Zhengang; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Kyaw, Zabu; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan (2014)
      The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes ...
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      On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes 

      Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ju, Zhengang; Ji, Yun; Kyaw, Zabu; Zhang, Xueliang; Hasanov, Namig; Zhu, Binbin; Lu, Shunpeng; Zhang, Yiping; Sun, Xiao Wei; Demir, Hilmi Volkan (2014)
      Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, ...
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      Low thermal-mass LEDs : size effect and limits 

      Lu, Shunpeng; Liu, Wei; Zhang, Zi-Hui; Tan, Swee Tiam; Ju, Zhengang; Ji, Yun; Zhang, Xueliang; Zhang, Yiping; Zhu, Binbin; Kyaw, Zabu; Hasanov, Namig; Sun, Xiao Wei; Demir, Hilmi Volkan (2014)
      In this work, low thermal-mass LEDs (LTM-LEDs) were developed and demonstrated in flip-chip configuration, studying both experimentally and theoretically the enhanced electrical and optical characteristics and the limits. ...
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      Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer 

      Zhang, Zi-Hui; Tan, Swee Tiam; Liu, Wei; Ju, Zhengang; Zheng, Ke; Kyaw, Zabu; Ji, Yun; Hasanov, Namig; Sun, Xiaowei; Demir, Hilmi Volkan (2013)
      This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating ...

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