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Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering
(2014)
The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes ...
On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
(2014)
Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, ...
Low thermal-mass LEDs : size effect and limits
(2014)
In this work, low thermal-mass LEDs (LTM-LEDs) were developed and demonstrated in flip-chip configuration, studying both experimentally and theoretically the enhanced electrical and optical characteristics and the limits. ...
Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
(2013)
This work reports both experimental and theoretical studies on
the InGaN/GaN light-emitting diodes (LEDs) with optical output power and
external quantum efficiency (EQE) levels substantially enhanced by
incorporating ...
