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Anomalous polarization switching in organic ferroelectric field effect transistors
(2007)
The authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene
fluoride-trifluoroethylene) as dielectric in bottom common gate ...
Enhanced organic ferroelectric field effect transistor characteristics with strained poly(vinylidene fluoride-trifluoroethylene) dielectric
(2008)
Poly(vinylidene fluoride-trifluoroethylene) (70–30 mol%) was used as the functional dielectric layer in organic ferroelectric field effect transistors (FeFET) for non-volatile memory applications. Thin P(VDF-TrFE) film ...
