Now showing items 1-4 of 4
A new millimeter-wave fixture deembedding method based on generalized cascade network model
In this letter, a universal cascade-based deembedding technique was presented for on-wafer characterization of the RF CMOS device. As compared with existing deembedding approaches, it is developed based on unique combinations ...
MOSFET drain current noise modeling with effective gate overdrive and junction noise
In this letter, a drain current noise model that includes the channel thermal noise and the shot noise generated at the source-bulk junction and the drain-bulk junction is presented. A unified analytical expression is ...
Impact of velocity saturation and hot carrier effects on channel thermal noise model of deep sub-micron MOSFETs
This paper discusses the impact of the short channel effects, such as channel length modulation (CLM), velocity saturation effect (VSE) and hot carrier effect (HCE), on the channel thermal noise model of short channel ...
A new field dependent mobility model for high frequency channel thermal noise of deep submicron RFCMOS
In this paper, a new field dependent effective mobility model including the drain-induced vertical field effect (DIVF) is presented to calculate the channel thermal noise of short channel MOSFETs operating at high frequencies. ...