Now showing items 1-10 of 18
Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering
The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes ...
Nonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes
In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased ...
Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].
On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN ...
On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, ...
Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer
InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron blocking layer (QWEBL) are designed and grown by a metal–organic chemical-vapor deposition (MOCVD) system. The proposed QWEBL ...
InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination
In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate the quantum confined Stark effect (QCSE), caused due to strong polarization induced electric field, through ...
Polarization self-screening in  oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency
InGaN/GaN light-emitting diodes (LEDs) grown along the  orientation inherit very strong polarization induced electric fields. This results in a reduced effective conduction band barrier height for the p-type AlGaN ...
Low thermal-mass LEDs : size effect and limits
In this work, low thermal-mass LEDs (LTM-LEDs) were developed and demonstrated in flip-chip configuration, studying both experimentally and theoretically the enhanced electrical and optical characteristics and the limits. ...
A hole modulator for InGaN/GaN light-emitting diodes
The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active ...