Now showing items 1-10 of 40
Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes
Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region ...
On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
A redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature ...
Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering
The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes ...
Highly Flexible, Electrically Driven, Top-Emitting, Quantum Dot Light-Emitting Stickers
Flexible information displays are key elements in future optoelectronic devices. Quantum dot light-emitting diodes (QLEDs) with advantages in color quality, stability, and cost-effectiveness are emerging as a candidate for ...
Stable, Efficient, and All-Solution-Processed Quantum Dot Light-Emitting Diodes with Double-Sided Metal Oxide Nanoparticle Charge Transport Layers
An efficient and stable quantum dot light-emitting diode (QLED) with double-sided metal oxide (MO) nanoparticle (NP) charge transport layers is fabricated by utilizing the solution-processed tungsten oxide (WO3) and zinc ...
Transition metal oxides on organic semiconductors
Transition metal oxides (TMOs) on organic semiconductors (OSs) structure has been widely used in inverted organic optoelectronic devices, including inverted organic light-emitting diodes (OLEDs) and inverted organic solar ...
AC-driven, color- and brightness-tunable organic light-emitting diodes constructed from an electron only device
In this paper, a color- and brightness-tunable organic light-emitting diode (OLED) is reported. This OLED was realized by inserting a charge generation layer into an electron only device to form an n-i-p-i-n structure. It ...
Observation of polarized gain from aligned colloidal nanorods
In recent years, colloidal semiconductor nanorods have attracted great interest for polarized spontaneous emission. However, their polarized gain has not been possible to achieve so far. In this work we show the highly ...
Nonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes
In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased ...
Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].