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Polarization self-screening in  oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency
InGaN/GaN light-emitting diodes (LEDs) grown along the  orientation inherit very strong polarization induced electric fields. This results in a reduced effective conduction band barrier height for the p-type AlGaN ...
A charge inverter for III-nitride light-emitting diodes
In this work, we propose a charge inverter that substantially increases the hole injection efficiency for InGaN/GaN light-emitting diodes(LEDs). The charge inverter consists of a metal/electrode, an insulator, and a ...