Now showing items 1-3 of 3
Anomalous polarization switching in organic ferroelectric field effect transistors
The authors demonstrate organic ferroelectric field effect transistors using poly(vinylidene fluoride-trifluoroethylene) as dielectric in bottom common gate ...
Improved pentacene device characteristics with sol–gel SiO2 dielectric films
The interfacial interactions between semiconductors and gate dielectrics have a profound influence on the device characteristics of field effect transistors (FETs). This paper reports on the concept of introducing a sol–gel ...
Electret mechanism, hysteresis, and ambient performance of sol-gel silica gate dielectrics in pentacene field-effect transistors
The electret induced hysteresis was studied in sol-gel silica films that result in higher drain currents and improved device performance in pentacene field-effect transistors. Vacuum and ambient condition ...