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Silicide formation from laser thermal processing of Ti/Co bilayers
A bilayered CoTi silicide structure consisting of an amorphous CoTi silicide and a highly textured CoTi silicide was found after pulsed excimer laser annealing of titanium/cobalt/silicon stack at high fluence ...
Formation of ultra-shallow p+/n junctions in silicon-on-insulator (SOI) substrate using laser annealing
Laser annealing (LA), in which the laser melts the surface layer of silicon and causes the dopants to be distributed uniformly within the melted region, produces abrupt, highly activated and ultrashallow junctions. The ...
Effects of Ti/Co and Co/Ti systems on the germanosilicidation of poly-Si capped poly-Si1−xGex substrate
Ti/Co and Co/Ti bilayered systems were used for the formation of Co germanosilicide on polysilicon buffered poly-Si1−xGex (x=0.2, 0.3) gate stacks. In both cases, substantial Ge was found to segregate to the grain boundaries ...
Characterization of the junction leakage of Ti-capped Ni-silicided junctions
The junction leakage characteristics of Ti-capped nickel-silicided diodes are presented. Ti-capped Ni-silicided devices rapid thermal annealed (RTA) at 400 °C exhibit high sheet resistances and suffer from narrow line ...
Ni(Pt) alloy silicidation on (100) Si and poly-silicon lines
The roles of the Pt in Ni-(5 at.% Pt) alloy reaction on narrow c-Si (100) and polysilicon (poly-Si) lines by rapid thermal annealed (RTP) in the range of 400 to 900 °C were studied. By the addition of Pt as an alloying ...