Now showing items 1-6 of 6
Role of low temperature rapid thermal annealing in post-laser-annealed p-channel metal-oxide-semiconductor field effect transistor
In this letter, the authors study the importance of a low temperature anneal in the removal of crystalline defects resulting from pulsed laser annealing of preamorphized ultrashallow p+ln junction. Using an additional low ...
Laser induced Ni(Ti) silicide formation
Effects of Ti alloying during laser-induced Ni silicide formation is studied. Unique triple layer microstructures were found with the presence of supercell in the NiSi2 grains formed at ...
Pulsed laser induced silicidation on TiN-capped Co/Si bilayers
This paper studies the effects of pulsed laser-induced annealing of TiN-capped Co/Si bilayers with and without preamorphized Si substrate. For a low fluence of 0.2 J /cm2, nonstoichiometry Co silicide with ...
Pyramidal structural defects in erbium silicide thin films
Pyramidal structural defects, 5–8 μm wide, have been discovered in thin films of epitaxial ErSi2−x formed by annealing thin Er films on Si(001) substrates at temperatures of 500–800 °C. The formation of these defects ...
Multiple-pulse laser thermal annealing for the formation of Co-silicided junction
Formation of Co-silicide contact layers on narrow silicon regions using multiple-pulse excimer laser annealing is demonstrated. Excellent performance of junction ...
Improved electrical performance of Erbium silicide Schottky diodes formed by pre-RTA amorphization of Si
Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height ϕ_Beff and ideality factor due to the presence ...