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Polarization dependence of intraband absorption in self-organized quantum dots
Photoluminescence and intraband absorption were investigated in n-doped self-organized InAs and In0.35Ga0.65As quantum dots grown on a GaAs substrate. Intraband absorption of the dots is strongly polarized along the growth ...
Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots
Postgrowth rapid thermal annealing was used to modify the structural and optical properties of the self-assembled InAs quantum dotsgrown on GaAs substrates by molecular beam epitaxy. It is found that significant narrowing ...
Characteristics of InGaAs quantum dot infrared photodetectors
A quantum dot infrared photodetector(QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° ...