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A 220-285 GHz SPDT Switch in 65-nm CMOS Using Switchable Resonator Concept
The paper reports a SPDT switch operating from 220 to 285 GHz in 65-nm bulk CMOS. The switchable resonator concept by using three coupled-lines topology is proposed and adopted in the switch design. Equivalent circuit ...
Novel Q-factor enhancement technique for on-chip spiral inductors and its application to CMOS low-noise amplifier designs
In this article, a novel Q-factor enhancement technique for on-chip spiral inductors is presented. Symmetric return ground structure in traditional on-chip spiral inductors is modified and shifted toward the side with ...
Novel defected ground structure and two-side loading scheme for miniaturized dual-band SIW bandpass filter designs
This letter reports a novel back-to-back E-shaped defected ground structure (DGS) and two-side loading scheme for miniaturized dual-band substrate integrated waveguide (SIW) bandpass filter (BPF) designs. The SIW loaded ...