Now showing items 1-3 of 3
Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices
A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its ...
Layer thinning and etching of mechanically exfoliated MoS2 nanosheets by thermal annealing in air
A simple thermal annealing method for layer thinning and etching of mechanically exfoliated MoS2 nanosheets in air is reported. Using this method, single-layer (1L) MoS2 nanosheets are achieved after the thinning of MoS2 ...
Memory devices using a mixture of MoS2 and graphene oxide as the active layer
A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration ...