Now showing items 1-3 of 3
A temperature-dependent DC model for quarter-micron LDD pMOSFET’s operating in a Bi-MOS structure
A temperature-dependent analytical model for deep submicrometer LDD p-channel devices operating in a Bi-MOS structure is reported for the first time. This model is based on experimental data obtained from 0.25-µm process ...
A low-power 16×16-b parallel multiplier utilizing pass-transistor logic
This paper describes a low-power 16x16-b parallel very large scale integration multiplier, designed and fabricated using a 0.8- m double-metal double-poly BiCMOS process. In order to achieve low-power operation, the ...
Comments on “Negative capacitance effect in semiconductor devices”
Capacitors play a very important role in the modeling of semiconductor devices. Without a good understanding and accurate model for the capacitance characteristics, one cannot model devices very well. The conventional ...