Now showing items 1-5 of 5
Polarization dependence of intraband absorption in self-organized quantum dots
Photoluminescence and intraband absorption were investigated in n-doped self-organized InAs and In0.35Ga0.65As quantum dots grown on a GaAs substrate. Intraband absorption of the dots is strongly polarized along the growth ...
Effects of rapid thermal annealing on structure and luminescence of self-assembled InAs/GaAs quantum dots
Postgrowth rapid thermal annealing was used to modify the structural and optical properties of the self-assembled InAs quantum dotsgrown on GaAs substrates by molecular beam epitaxy. It is found that significant narrowing ...
Characteristics of InGaAs quantum dot infrared photodetectors
A quantum dot infrared photodetector(QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° ...
Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasers
The valence subband structures, density-of-states, and optical gain of (0001) wurtzite InxGa12xN/GaN quantum wells (QWs) are studied using a numerical approach. We used the effective-mass parameters of GaN and InN derived ...
Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs
In this work, the band offsets at the Ga0.5In0.5P/AlxGa0.5-xIn0.5P heterojunction lattice matched to (001) GaAs was calculated over the whole range of aluminum composition from x=0.0 to 0.5 using the first-principles ...