Now showing items 1-4 of 4
New salicidation technology with Ni(Pt) alloy for MOSFETs
A novel salicide technology to improve the thermal stability of the conventional Ni silicide has been developed by employing Ni(Pt) alloy salicidation. This technique provides an effective avenue to overcome the ...
Comparative study of current-voltage characteristics of Ni and Ni(Pt)- alloy silicided p+/n diodes
A comparative study of the I –V characteristics of p+/n diodes silicided with a pure Ni and Ni(Pt) alloy has been performed. Higher saturation currents as well as abnormal reverse I –V characteristics were observed for ...
Micro-RBS study of nickel silicide formation
Two MeV He+ microbeam-Rutherford backscattering (μ-RBS) is used to obtain information on silicide formation in patterned nickel silicide samples under different annealing conditions. It is important to characterize silicide ...
Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation
The key feature of this study is to incorporate N2 + implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2 + implant is able to suppress ...