Now showing items 1-6 of 6
Multilayer stacked low-temperature-reduced graphene oxide films : preparation, characterization, and application in polymer memory devices
Highly reduced graphene oxide (rGO) films are fabricated by combining reduction with smeared hydrazine at low temperature (e.g., 100 °C) and the multilayer stacking technique. The prepared rGO film, which has a lower sheet ...
Bulk heterojunction polymer memory devices with reduced graphene oxide as electrodes
A unique device structure with a configuration of reduced graphene oxide (rGO) /P3HT:PCBM/Al has been designed for the polymer nonvolatile memory device. The current−voltage (I−V) characteristics of the fabricated device ...
Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices
A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its ...
A universal, rapid method for clean transfer of nanostructures onto various substrates
Transfer and integration of nanostructures onto target substrates is the prerequisite for their fundamental studies and practical applications. Conventional transfer techniques that involve stamping, lift-off, and/or ...
Layer thinning and etching of mechanically exfoliated MoS2 nanosheets by thermal annealing in air
A simple thermal annealing method for layer thinning and etching of mechanically exfoliated MoS2 nanosheets in air is reported. Using this method, single-layer (1L) MoS2 nanosheets are achieved after the thinning of MoS2 ...
Memory devices using a mixture of MoS2 and graphene oxide as the active layer
A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration ...