Now showing items 1-10 of 16
On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
A redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature ...
Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering
The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes ...
On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN ...
On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, ...
Low thermal-mass LEDs : size effect and limits
In this work, low thermal-mass LEDs (LTM-LEDs) were developed and demonstrated in flip-chip configuration, studying both experimentally and theoretically the enhanced electrical and optical characteristics and the limits. ...
Light extraction efficiency enhancement of colloidal quantum dot light-emitting diodes using large-scale nanopillar arrays
A colloidal quantum dot light-emitting diode (QLED) is reported with substantially enhanced light extraction efficiency by applying a layer of large-scale, low-cost, periodic nanopillar arrays. Zinc oxide nanopillars are ...
On the triplet distribution and its effect on an improved phosphorescent organic light-emitting diode
We reported phosphorescent organic light-emitting diodes with internal quantum efficiency near 100% with significantly reduced efficiency roll-off. It was found that the use of different hole transporting layer (HTL) affects ...
High-quality InP/ZnS nanocrystals with high photometric performance and their application to white quantum dot light-emitting diodes
Full visible range covering InP/ZnS core-shell nanocrystals with high photometric performance have been prepared. Making use of these nanocrystals, we demonstrate a white quantum dot LED with a high color rendering index of 91.
Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating ...
Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes
A three-step graded undoped-InGaN layers embedded between the GaN last quantum barrier layer and the p-AlGaN electron blocking layer was proposed and its effect on the performance of InGaN/GaN light-emitting diodes was ...