Now showing items 1-10 of 16
On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
A redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature ...
Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering
The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes ...
On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN ...
On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes
Electron overflow limits the quantum efficiency of InGaN/GaN light-emitting diodes. InGaN electron cooler (EC) can be inserted before growing InGaN/GaN multiple quantum wells (MQWs) to reduce electron overflow. However, ...
Improved performance of InGaN/GaN flip-chip light-emitting diodes through the use of robust Ni/Ag/TiW mirror contacts
In this work, the authors report the incorporation of TiW alloy in InGaN/GaN-based flip-chip light-emitting diodes (LEDs). The advantages provided by the use of TiW are analyzed in detail. InGaN/GaN multiple quantum well ...
Low thermal-mass LEDs : size effect and limits
In this work, low thermal-mass LEDs (LTM-LEDs) were developed and demonstrated in flip-chip configuration, studying both experimentally and theoretically the enhanced electrical and optical characteristics and the limits. ...
Light extraction efficiency enhancement of colloidal quantum dot light-emitting diodes using large-scale nanopillar arrays
A colloidal quantum dot light-emitting diode (QLED) is reported with substantially enhanced light extraction efficiency by applying a layer of large-scale, low-cost, periodic nanopillar arrays. Zinc oxide nanopillars are ...
On the triplet distribution and its effect on an improved phosphorescent organic light-emitting diode
We reported phosphorescent organic light-emitting diodes with internal quantum efficiency near 100% with significantly reduced efficiency roll-off. It was found that the use of different hole transporting layer (HTL) affects ...
High-quality InP/ZnS nanocrystals with high photometric performance and their application to white quantum dot light-emitting diodes
Full visible range covering InP/ZnS core-shell nanocrystals with high photometric performance have been prepared. Making use of these nanocrystals, we demonstrate a white quantum dot LED with a high color rendering index of 91.
Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer
This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced by incorporating ...