Now showing items 1-10 of 116
Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes
Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region ...
High-efficiency low-crosstalk dielectric metasurfaces of mid-wave infrared focal plane arrays
High-resolution compact-size focal plane arrays (FPAs) suffer the fundamental geometrical tradeoff between the optical resolution (pixel size miniaturization) and the optical crosstalk (spillover of neighboring pixel ...
On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
A redshift of the peak emission wavelength was observed in the blue light emitting diodes of InGaN/GaN grown with a higher temperature interlayer that was sandwiched between the low-temperature buffer layer and high-temperature ...
Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering
The p-type AlGaN electron blocking layer (EBL) is widely used in InGaN/GaN light-emitting diodes (LEDs) for electron overflow suppression. However, a typical EBL also reduces the hole injection efficiency, because holes ...
Experimental Determination of the Absorption Cross-Section and Molar Extinction Coefficient of Colloidal CdSe Nanoplatelets
There has been a strong interest in solution-processed two-dimensional nanomaterials because of their great potential in optoelectronics. Here, the absorption cross-section and molar extinction coefficient of four and five ...
Highly Flexible, Electrically Driven, Top-Emitting, Quantum Dot Light-Emitting Stickers
Flexible information displays are key elements in future optoelectronic devices. Quantum dot light-emitting diodes (QLEDs) with advantages in color quality, stability, and cost-effectiveness are emerging as a candidate for ...
Observation of polarized gain from aligned colloidal nanorods
In recent years, colloidal semiconductor nanorods have attracted great interest for polarized spontaneous emission. However, their polarized gain has not been possible to achieve so far. In this work we show the highly ...
Nonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes
In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased ...
Computational study of power conversion and luminous efficiency performance for semiconductor quantum dot nanophosphors on light-emitting diodes
We present power conversion efficiency (PCE) and luminous efficiency (LE) performance levels of high photometric quality white LEDs integrated with quantum dots (QDs) achieving an averaged color rendering index of ≥90 (with ...
Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].