Now showing items 11-13 of 13
Nickel silicide formation on Si(100) and Poly-Si with a presilicide N2 + implantation
The key feature of this study is to incorporate N2 + implant prior to Ni sputtering on the poly-Si gate and source/drain regions. The results show that the incorporation of the presilicide N2 + implant is able to suppress ...
Effects of Si(001) surface amorphization on ErSi2 thin film
In a materials study of ErSi2/Si(001) as a potential candidate for Schottky source/drain NMOS application, the properties of ErSi2 thin film were investigated with varying degrees of Si(001) surface amorphization. The ...
Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines
The phase and morphology stability of NiSi and Ni(Pt)Si formed on the poly-Si lines and wide pads have been studied. Differences in the NiSi2 nucleation temperature and the extent of layer inversion have ...