Now showing items 11-15 of 15
Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers
InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB structure, in which the barrier thickness decreases ...
PN-type quantum barrier for InGaN/GaN light emitting diodes
In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the ...
Room-temperature larger-scale highly ordered nanorod imprints of ZnO film
Room-temperature large-scale highly ordered nanorod-patterned ZnO films directly integrated on III-nitride light-emitting diodes (LEDs) are proposed and demonstrated via low-cost modified nanoimprinting, avoiding a ...
InGaN/GaN light-emitting diode with a polarization tunnel junction
We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p+-GaN/InGaN/n+-GaN polarization tunnel junctions. Improved current spreading and carrier tunneling probability were obtained in the proposed ...
Polarization self-screening in  oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency
InGaN/GaN light-emitting diodes (LEDs) grown along the  orientation inherit very strong polarization induced electric fields. This results in a reduced effective conduction band barrier height for the p-type AlGaN ...