Now showing items 11-20 of 114
Temperature-dependent Optoelectronic Properties of Quasi-2D Colloidal Cadmium Selenide Nanoplatelets
Colloidal Cadmium Selenide (CdSe) nanoplatelets (NPLs) are a recently developed class of efficient luminescent nanomaterial suitable for optoelectronic device applications. A change in temperature greatly affects their ...
Transition metal oxides on organic semiconductors
Transition metal oxides (TMOs) on organic semiconductors (OSs) structure has been widely used in inverted organic optoelectronic devices, including inverted organic light-emitting diodes (OLEDs) and inverted organic solar ...
AC-driven, color- and brightness-tunable organic light-emitting diodes constructed from an electron only device
In this paper, a color- and brightness-tunable organic light-emitting diode (OLED) is reported. This OLED was realized by inserting a charge generation layer into an electron only device to form an n-i-p-i-n structure. It ...
Observation of polarized gain from aligned colloidal nanorods
In recent years, colloidal semiconductor nanorods have attracted great interest for polarized spontaneous emission. However, their polarized gain has not been possible to achieve so far. In this work we show the highly ...
Nonradiative recombination — critical in choosing quantum well number for InGaN/GaN light-emitting diodes
In this work, InGaN/GaN light-emitting diodes (LEDs) possessing varied quantum well (QW) numbers were systematically investigated both numerically and experimentally. The numerical computations show that with the increased ...
Time-resolved photoluminescence study of CdSe/CdMnS/CdS core/multi-shell nanoplatelets
We used photoluminescence spectroscopy to resolve two emission features in CdSe/CdMnS/CdS and CdSe/CdS core/multi-shell nanoplatelet heterostructures. The photoluminescence from the magnetic sample has a positive circular ...
Computational study of power conversion and luminous efficiency performance for semiconductor quantum dot nanophosphors on light-emitting diodes
We present power conversion efficiency (PCE) and luminous efficiency (LE) performance levels of high photometric quality white LEDs integrated with quantum dots (QDs) achieving an averaged color rendering index of ≥90 (with ...
Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer : errata
The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].
Polarization self-screening in  oriented InGaN/GaN light-emitting diodes for improving the electron injection efficiency
InGaN/GaN light-emitting diodes (LEDs) grown along the  orientation inherit very strong polarization induced electric fields. This results in a reduced effective conduction band barrier height for the p-type AlGaN ...
On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes
N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both experimentally and theoretically to increase the performance of InGaN/GaN ...