Now showing items 21-24 of 24
Broad-band design techniques for transimpedance amplifiers
In this paper, a novel bandwidth enhancement technique based on the combination of capacitive degeneration, broad-band matching network, and the regulated cascode (RGC) input stage is proposed and analyzed, which turns the ...
Comments on “Negative capacitance effect in semiconductor devices”
Capacitors play a very important role in the modeling of semiconductor devices. Without a good understanding and accurate model for the capacitance characteristics, one cannot model devices very well. The conventional ...
Novel RF process monitoring test structure for silicon devices
This paper demonstrates a novel RFCMOS process monitoring test structure. Outstanding agreement in dc and radio frequency (RF) characteristics has been observed between conventional test structure and the new process ...
RF CMOS low-phase-noise LC oscillator through memory reduction tail transistor
Based on the understanding of flicker noise generation in “silicon metal-oxide semiconductor field-effect transistors” (MOSFETs), a novel method for improving the phase noise performance of a CMOS LC oscillator ...