Now showing items 31-36 of 36
Characterization of the junction leakage of Ti-capped Ni-silicided junctions
The junction leakage characteristics of Ti-capped nickel-silicided diodes are presented. Ti-capped Ni-silicided devices rapid thermal annealed (RTA) at 400 °C exhibit high sheet resistances and suffer from narrow line ...
Ni(Pt) alloy silicidation on (100) Si and poly-silicon lines
The roles of the Pt in Ni-(5 at.% Pt) alloy reaction on narrow c-Si (100) and polysilicon (poly-Si) lines by rapid thermal annealed (RTP) in the range of 400 to 900 °C were studied. By the addition of Pt as an alloying ...
Formation of ultra-shallow p+/n junctions in silicon-on-insulator (SOI) substrate using laser annealing
Laser annealing (LA), in which the laser melts the surface layer of silicon and causes the dopants to be distributed uniformly within the melted region, produces abrupt, highly activated and ultrashallow junctions. The ...
In situ XRD analysis of Ni(Pt)/Si(100) reactions in low temperature regime ≤400°C
The key feature of this paper is to highlight the use of an in situ XRD technique to the study of the initial reaction of Ni(Pt) on Si(100) isothermally. The concentration of Ni and Pt as a function of time in the low ...
Effects of Si(001) surface amorphization on ErSi2 thin film
In a materials study of ErSi2/Si(001) as a potential candidate for Schottky source/drain NMOS application, the properties of ErSi2 thin film were investigated with varying degrees of Si(001) surface amorphization. The ...
Phase and layer stability of Ni- and Ni(Pt)-silicides on narrow poly-Si lines
The phase and morphology stability of NiSi and Ni(Pt)Si formed on the poly-Si lines and wide pads have been studied. Differences in the NiSi2 nucleation temperature and the extent of layer inversion have ...