Now showing items 61-70 of 91
Ferroelectric tunnel junction memory devices made from monolayers of vinylidene fluoride oligomers
Conductance bistability in Pt/Si–vinylidene fluoride (VDF) oligomer–Au ferroelectric tunnel junction devices is demonstrated. I–V and C–V measurements reveal bistable conductance switching within biasing voltage of ±0.5V ...
Thin SnO2 nanowires with uniform diameter as excellent field emitters : a stability of more than 2400 minutes
The stability of a field-emission event, i.e., the stability of the emission current over a long period of time, against thermal effects, etc., is one of the key factors for its application in real devices. Although ...
Room temperature CO gas sensing using Zn-doped In2O3 single nanowire field effect transistors
We demonstrate a room temperature sensing of CO gas (1–5 ppm) using high performance single Zn-doped In2O3 nanowire field effect transistors (Zn–In2O3 NW-FETs). Zn–In2O3 nanowires were grown in a horizontal CVD furnace; ...
Enhancing electrochemical reaction sites in nickel–cobalt layered double hydroxides on zinc tin oxide nanowires : a hybrid material for an asymmetric supercapacitor device
Conducting nanowires are of particular interest in energy-related research on devices such as supercapacitors, batteries, water splitting electrodes and solar cells. Their direct electrode/current collector contact and ...
Alternative resistive switching mechanism based on migration of charged counter-ions within conductive polymers
In this paper, an alternative bi-stable resistive switching mechanism for non-volatile organic memory applications is reported. The memory device is formed from a sandwiched structure of Au/polyaniline:poly(4-styrenesulfonic ...
Materials research at Nanyang Technological University, Singapore
Abstract is not available in fulltext.
Dodecyl sulfate-induced fast faradic process in nickel cobalt oxide–reduced graphite oxide composite material and its application for asymmetric supercapacitor device
In this contribution, we report a facile preparation method of nickel cobalt oxide–reduced graphite oxide (NiCo2O4–rGO) composite material. A fast Faradic process has been realized by sodium dodecyl sulfate (SDS)-induced ...
Flexible and highly scalable V2O5-rGO electrodes in an organic electrolyte for supercapacitor devices
Vanadium pentoxide–reduced graphene oxide (rGO) free-standing electrodes are used as electrodes for supercapacitor applications, eliminating the need for current collectors or additives and reducing resistance (sheet ...
Spontaneous growth and phase transformation of highly conductive nickel germanide nanowires
We report the synthesis, phase transformation, and electrical property measurement of single-crystal NiGe and ε-Ni5Ge3 nanowires (NWs). NiGe NWs were spontaneously synthesized by chemical vapor deposition of GeH4 onto a ...
Enhancing charge-storage capacity of non-volatile memory devices using template-directed assembly of gold nanoparticles
We demonstrate the controlled fabrication of aggregates of gold nanoparticles as a means of enhancing the charge-storage capacity of metal–insulator–semiconductor (MIS) devices by up to 300% at a low biasing voltage of ±4 ...